Terahertz Spectroscopy of Modulation Doped Core-Shell GaAs/AlGaAs Nanowires

Institute of Electrical and Electronics Engineers (IEEE) (2015) 1-1

Authors:

Jessica L Boland, Sonia Conesa-Boj, G Tütüncouglu, F Matteini, D Rüffer, A Casadei, F Gaveen, F Amaduzzi, P Parkinson, C Davies, HJ Joyce, LM Herz, A Fontcuberta I Morral, Michael B Johnston

Enhanced Amplified Spontaneous Emission in Perovskites using a Flexible Cholesteric Liquid Crystal Reflector

Nano letters American Chemical Society 15:8 (2015) 4935-4941

Authors:

Samuel D Stranks, Simon M Wood, Konrad Wojciechowski, Felix Deschler, Michael Saliba, Hitesh Khandelwal, Jay B Patel, Steve J Elston, Laura Herz, Michael Johnston, Albertus PHJ Schenning, Michael G Debije, Moritz Riede, Stephen M Morris, Henry J Snaith

Abstract:

Organic-inorganic perovskites are highly promising solar cell materials with laboratory-based power conversion efficiencies already matching those of established thin film technologies. Their exceptional photovoltaic performance is in part attributed to the presence of efficient radiative recombination pathways, thereby opening up the possibility of efficient light-emitting devices. Here, we demonstrate optically pumped amplified spontaneous emission (ASE) at 780 nm from a 50 nm-thick film of CH3NH3PbI3 perovskite that is sandwiched within a cavity composed of a thin-film (∼7 μm) cholesteric liquid crystal (CLC) reflector and a metal back-reflector. The threshold fluence for ASE in the perovskite film is reduced by at least two orders of magnitude in the presence of the CLC reflector, which results in a factor of two reduction in threshold fluence compared to previous reports. We consider this to be due to improved coupling of the oblique and out-of-plane modes that are reflected into the bulk in addition to any contributions from cavity modes. Furthermore, we also demonstrate enhanced ASE on flexible reflectors and discuss how improvements in the quality factor and reflectivity of the CLC layers could lead to single-mode lasing using CLC reflectors. Our work opens up the possibility of fabricating widely wavelength-tunable "mirror-less" single-mode lasers on flexible substrates, which could find use in applications such as flexible displays and friend or foe identification.

InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

Nanotechnology IOP Publishing 26:20 (2015) 205604

Authors:

Amira S Ameruddin, H Aruni Fonseka, Philippe Caroff, Jennifer Wong-Leung, Roy LM Op het Veld, Jessica L Boland, Michael B Johnston, Hark Hoe Tan, Chennupati Jagadish

Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping

Nano Letters American Chemical Society (ACS) 15:5 (2015) 3017-3023

Authors:

Fan Wang, Qian Gao, Kun Peng, Zhe Li, Ziyuan Li, Yanan Guo, Lan Fu, Leigh Morris Smith, Hark Hoe Tan, Chennupati Jagadish

Fast charge-carrier trapping in TiO2 nanotubes

Journal of Physical Chemistry C American Chemical Society 119:17 (2015) 9159-9168

Authors:

Christian Wehrenfennig, CM Palumbiny, Henry J Snaith, Michael Johnston, L Schmidt-Mende, Laura Herz

Abstract:

One-dimensional semiconductors such as nanowires and nanotubes are attractive materials for incorporation in photovoltaic devices as they potentially offer short percolation pathways to charge-collecting contacts. We report the observation of free-electron lifetimes in TiO2 nanotubes of the order of tens of picoseconds. These lifetimes are surprisingly short compared to those determined in films of TiO2 nanoparticles. Samples of ordered nanotube arrays with several different tube wall thicknesses were fabricated by anodization and have been investigated by means of optical-pump-terahertz-probe (OPTP) spectroscopy, which allows measurement of transient photoinduced conductivity with picosecond resolution. Our results indicate a two-stage decay of the photoexcited electron population. We attribute the faster component to temporary immobilization of charge in shallow trap states, from which electrons can detrap again by thermal excitation. The slower component most likely reflects irreversible trapping in states deeper below the conduction band edge. Free-electron lifetimes associated with shallow trapping appear to be independent of the tube wall thickness and have very similar values for electrons directly photoexcited in the material and for those injected from an attached photoexcited dye. These results suggest that trap states are not predominantly located at the surface of the tubes. The effective THz charge-carrier mobility in the TiO2 nanotubes is determined (0.1-0.4 cm2/(Vs)) and found to be within the same range as carrier mobilities reported for TiO2 nanoparticles. Implications for the relative performance of these nanostructures in dye-sensitized solar cells are discussed.