Directed assembly of layered perovskite heterostructures as single crystals
Nature Springer Nature 597:7876 (2021) 355-359
Abstract:
The precise stacking of different two-dimensional (2D) structures such as graphene and MoS2 has reinvigorated the field of 2D materials, revealing exotic phenomena at their interfaces1,2. These unique interfaces are typically constructed using mechanical or deposition-based methods to build a heterostructure one monolayer at a time2,3. By contrast, self-assembly is a scalable technique, where complex materials can selectively form in solution4,5,6. Here we show a synthetic strategy for the self-assembly of layered perovskite–non-perovskite heterostructures into large single crystals in aqueous solution. Using bifunctional organic molecules as directing groups, we have isolated six layered heterostructures that form as an interleaving of perovskite slabs with a different inorganic lattice, previously unknown to crystallize with perovskites. In many cases, these intergrown lattices are 2D congeners of canonical inorganic structure types. To our knowledge, these compounds are the first layered perovskite heterostructures formed using organic templates and characterized by single-crystal X-ray diffraction. Notably, this interleaving of inorganic structures can markedly transform the band structure. Optical data and first principles calculations show that substantive coupling between perovskite and intergrowth layers leads to new electronic transitions distributed across both sublattices. Given the technological promise of halide perovskites4, this intuitive synthetic route sets a foundation for the directed synthesis of richly structured complex semiconductors that self-assemble in water.Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance
(2021)
Phonon Screening of Excitons in Semiconductors: Halide Perovskites and Beyond.
Physical review letters American Physical Society (APS) 127:6 (2021) 67401
Abstract:
The ab initio Bethe-Salpeter equation (BSE) approach, an established method for the study of excitons in materials, is typically solved in a limit where only static screening from electrons is captured. Here, we generalize this framework to include dynamical screening from phonons at lowest order in the electron-phonon interaction. We apply this generalized BSE approach to a series of inorganic lead halide perovskites, CsPbX_{3}, with X=Cl, Br, and I. We find that inclusion of screening from phonons significantly reduces the computed exciton binding energies of these systems. By deriving a simple expression for phonon screening effects, we reveal general trends for their importance in semiconductors and insulators, based on a hydrogenic exciton model. We demonstrate that the magnitude of the phonon screening correction in isotropic materials can be reliably predicted using four material specific parameters: the reduced effective mass, static and optical dielectric constants, and frequency of the most strongly coupled longitudinal-optical phonon mode. This framework helps to elucidate the importance of phonon screening and its relation to excitonic properties in a broad class of semiconductors.Band gaps of crystalline solids from Wannier-localization-based optimal tuning of a screened range-separated hybrid functional.
Proceedings of the National Academy of Sciences of the United States of America 118:34 (2021) ARTN e2104556118
Abstract:
Accurate prediction of fundamental band gaps of crystalline solid-state systems entirely within density functional theory is a long-standing challenge. Here, we present a simple and inexpensive method that achieves this by means of nonempirical optimal tuning of the parameters of a screened range-separated hybrid functional. The tuning involves the enforcement of an ansatz that generalizes the ionization potential theorem to the removal of an electron from an occupied state described by a localized Wannier function in a modestly sized supercell calculation. The method is benchmarked against experiment for a set of systems ranging from narrow band-gap semiconductors to large band-gap insulators, spanning a range of fundamental band gaps from 0.2 to 14.2 electronvolts (eV), and is found to yield quantitative accuracy across the board, with a mean absolute error of ∼0.1 eV and a maximal error of ∼0.2 eV.Hot electron cooling in InSb probed by ultrafast time-resolved terahertz cyclotron resonance
Physical Review B American Physical Society 103 (2021) 245205